非掺杂异质结IBC太阳能电池的研究-林豪

1896 1920 1987 2006 非掺杂异质结全背太阳能电池的研究 林豪 1,3，高平奇 2,3，王佳佳 3，张龙飞 3，沈 文忠 1,* 1上海交通大学太阳能研究所 ,物理与天文系 2中山大学，材料学 院 3中国科学院宁波材料技术与工程研究所 1.Backgroud Eff. 26.6% HJ-IBC large-area: 180 cm2 • K. Yoshikawa, H. Kawasaki, W. Yoshida, T. Irie, K. Konishi, K. Nakano, T. Uto, D. Adachi, M. Kanematsu, H. Uzu, and K. Yamamoto, Nat. Energy 2, 17032 (2017). 1.硅基太阳能电池最高效率 1.Backgroud 2.同质结、异质结与非掺杂异质结 n c-Si n c-Si n c-Si 扩硼 （扩散炉 900℃ ） 同质结 a-Si/c-Si 异质结 非晶硅沉积 （ PECVD 200 ℃ ） p+ c-Si 高公函材料沉积 （热蒸发，旋涂等 ） 非掺杂异质结 a-Si:H(p+)/a-Si:H(i) TMO/a-Si:H(i) a- Si: H(p + ) n c-Si a- Si: H( i) EF Ev Ec TMO n c-Si a- Si: H( i) EF Ev Ec n p+ EF Ev Ec 1.Backgroud H.-D. Um, N. Kim, K. Lee, I. Hwang, J. H. Seo and K. Seo,Nano Lett., 2016, 16, 981–987 3.同质结异质结 IBC工艺对比 同质结 IBC 非掺杂异质结 IBC predictive efficiency: 25.1%. Simulation results 3 fA/cm2 46 fA/cm2 10 fA/cm2 2.PEDOT:PSS/Si 异质结 IBC太阳能电池 Background Passivation results Designing Structures of PEDOT IBC Solarcell c1 c3 1.Deposition of Passivation & anti-relection layer photoresist 2.Photolithography & etch-back 3.MgOx/Al deposition & Lift-off 4.Photolithography & etch-back 5.PEDOT:PSS spin coating & Al deposition Fabrication process of PEDOT:PSS/Si heterojunction ABC solar cell. The structure of PEDOT:PSS/Si heterojunction based IBC solar cell. (a) Schematic of the IBC device. (b) The cross-sectional view of the back- contact region. (c) Corresponding SEM images of the back-contact region. (d-f) Magnified SEM images of white-square region in (c) from left to right, respectively. Scale bars, 10 𝜇𝑚 in (c) and 200 nm for (d-f). 0.0 0.2 0.4 0.6 0 10 20 30 40 Jsc(mA/cm 2 ) U( V) Fr ont -PEDOT B ack -PEDOT IB C- PE DO T a b c ~44 mA/cm2 Ag Ag 𝐒𝐢𝐍𝐱/𝐀𝐥𝟐𝐎𝟑 n-Si PEDOT:PSS Polymer MgOx/Al Results and Discussion Front-PEDOT Back-PEDOT IBC-PEDOT Electrode shade loss(10% shading area) 4.4 4.4 Parasitic absorption loss 2.0 3.0 Reflection loss 1.2 2.3 1.1 Jsc 31.8 34.9 38.4 Recombination and others loss 2.5 1.5 5.5 400 600 800 1000 0 5 10 15 Re flectio n(% ) Wa v el eng th(nm) Results and Discussion n-type Si Pitch 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, the Netherlands, 22-26 September 2014 ETL(BSF) HTL (emitter) h+ h + h+ electrical shading losses Simulation results by Lumerical DEVICE ETL HTL 100cm/s 100𝜇m n-type (4Ω ∙𝑐m) 5cm/s 电子传输层钝化性能 ↑ 直接掩模 IBC工艺 3.直接掩模法异质结 IBC太阳能电池 总结 1.采用埋栅工艺成功的制备了首个 PEDOT:PSS/Si 异质结 IBC太阳能电池，且 实验效率达到 16.3%。 2.通过理论分析，发现进一步改善 ETL层的钝化效果， PEDOT:PSS/Si 异质结 IBC太阳能电池有望超过 20%的效率。 3.成功采用直接掩模的方法，制备了效率为 18%的 TMO/a-Si/c-Si 异质结太阳 能电池。 4.理论分析标明，进一步提高钝化，接触电阻等参数将进一步提升电池效率。 Thanks!