TUV莱茵-高效太阳电池的精确测量方法

Accurate Measurement of High Efficiency Cell Presentation at PVQAT Oct. 2018 Dr. Qi. Gao Solar Technology R • Compared with Mono and Poly c-Si solar cells, the effect of spectral mismatch is more pronounced on power rating of high-efficiency solar cells; • Spectral mismatch correction is necessary for the accurate measurement of HE-Si cells. 29.10.2018 Präsentation TÜV Rheinland19 MMF calculation and IV curve correction I2 = I1 + ISC1 · ( E2 / E1 – 1 ) +  · ( T2 – T1 ) V2 = V1– RS · ( I2 – I1 ) – K · I2 · ( T2 – T1 ) +  · ( T2 – T1 ) The spectral mismatch factor (M) is a correction factor for irradiance (lamp power) of the solar simulator measured with a calibrated reference cell.! EλSIM EλAM1.5 sλREF sλDUT ΜM IE C 60 90 4- 7 IEC 60891-1 29.10.2018 Präsentation TÜV Rheinland20 Measurement uncertainty related to MMF  MMF correction applied result in lower uncertainty for HE solar cells  Spectral mismatch corrections are recommended for accurate rating of HE c-Si devices (±0.4%, k=2). Without MMF correction With MMF correction c-Si p-Si HE c-Si c-Si p-Si HE c-Si c-Si p-Si HE c-Si c-Si p-Si HE c-SiU nc or re cte d Sp ec tra l Mi sm atc h Un ce rta inty (% ), K= 2 Class A++ 0.01±0.37%, k=2 Class A+ 0.22±0.72%, k=2 Class A 0.17±1.37%, k=2 Class B -0.19±1.11%, k=2 -0.6% -0.4% -0.2% 0.0% 0.2% 0.4% 0.6% A++ A+ A B A++ A+ A B A++ A+ A BC or re cte d Sp ec tra l Mi sm atc h Un ce rta inty (% ), k= 2 mono-Si / poly-Si: ±0.33%, k=2 mono-Si / mono-Si: ±0.23%, k=2 mono-Si / HE c-Si: ±0.38%, k=2 3% 2% 1% 0% -1% -2% -3% 29.10.2018 Präsentation TÜV Rheinland21 Conclusion  There are some challenges on power rating of high-efficiency solar cells, such as high uncertainty, hysteresis effect and spectral mismatch .  Patented Dynamic IV allows the electrical characterization of HE devices achieving high measurement quality;  The uncorrected spectral mismatch of HE c-Si PV may result in errors exceeding 2% even for class A solar simulators;  Spectral mismatch corrections can decrease the measurement uncertainty effectively, which are recommended for accurate rating of HE c-Si devices. Thank you for your attention !