非_单晶硅太阳能电池组件比功率发电量比较_柴金龙.pdf
»22 ,»3 ù ªvÐÐ ØýñVol.22, No.3 2005 M7JOURNAL OF SHENZHEN UNIVERSITY SCIENCE AND ENG INEERING July 2005 ÓcI|:1000-2618(2005)03-0226-04 là ° ù:2005-01-06 Teº:¸Á C(1963-), 3(qB),~ 8~ ö g ¦, ªvÐýñ =. E-mail:chaijl@szu. edu.cn d、ÖA þ ?ÈýFq1ÿ q?È 1 柴金龙1 , 李 毅2, 胡盛明2 (1. ªvÐýñ/ Ðý, ª518060;2. ª g7m S/?ZµK ³, ª518029) K 1:为测试非晶硅和单晶硅太阳能电池组件的实际发电能力, 设计了由电子模拟负载和直流安时 计组成的发电量测量装置, 对两种太阳能电池组件的发电量进行实验测试比较. 提出比功率发电量这一物 理量, 直观表达太阳能电池组件的发电性能. 实验表明, 在晴天直射强光和阴雨天弱散射光环境下, 非晶 硅太阳能电池板的比功率发电量均大于单晶硅. 1oM:非晶硅;单晶硅;太阳能电池;比功率发电量;电子模拟负载;散射光;弱光;光伏特性 Ïms Ë|:TM 615 ÓDS M :A ? ?÷¥Å -î¹ÅÿòSÜ6?Z¥ Þ à.ÐN] H,È? ?÷ î b¥= Ä ¦ Ë ¥ 3iÌâÁ 3 ø×¥µ ëY.¹N,¸ S EFv 3 ?÷¥ùî 7Z ï[ 1～ 3] .áS ^ ?÷h{vS, F²、 ¿© ?÷ ÷ , þ ? æ¨/ ¥ùîµ Es×1¥il.+Y ^ ð £{Z ©¥ ª¹ u,B Mϵ Øs= H W¹ d?,Ì 、N ÷¥ þ ?Èý 7?A¤÷ L¨N´. -, òÕ þ ?ÈýFqÈ ?¥ö1 ·S ^ S© kHq/¥-ç {ÿ qWp.® ¿;vMÄ, þ ?ÈýFq¥ {ÿ q9 MÄ,yN, L= P¨ H,Ç[-ç {ÿ q þ ?ÈýFq¥È ?, ? Q L= ?Èr ?,¨¼ ª,÷1¥ ^ ¼Hq/ þ ?ÈýFq Ä B HW¥1-çÿ q?È , HW = îµ¼;v f /¥?È 9, ñ ? zQ þ ?ÈýFq ¨Ï¥ L =?È ? ï.S dÃvй)Âÿ30°,d ÖAÖA þ ?ÈýFq¥1-çÿ q?È É © k1ùî[ 1].®¿¹ o ¥Â], °v ©HqµYv,7 þ ?Èý °vH qdÈ ùË,yN, B¹Ä¤¥ L² , ð¹Ä ^M], ³ÉB£, “ - ð ݹ u à A Ë »¥© k1ùî. ÓsY© k Âÿ20°¥ ª¥dÖAÖA þ ? ÈýFq¥1-çÿ q?È ,i ²TÉ1 s. 1 实验原理与方法 þ ?Èý¥1-çÿ q?È , ^·B H W = þ ?Èý ¼ L=;vHq/¥9 Æ? È Ð þ ?Èý-çÿ q¥1´, çl¹ þ ?Èý Ä ° (?È . þ ?Èý¥-çÿ q¹ Pm =Um Im . (1) Ï, UmImsY}VKvÿ q {Ä¥ýTÈâ ýTÈ @. ?È ¹ Q =∑Pm △t =∫ t2 t1 Um (t)Im (t)dt, (2) Ï, t¹©ç HW. UmM H,µ Q =U ∫ t2 t1 I(t)dt. (3) çl °?È Qd =U ∫day I(t)dt. 1-çÿ q?È ¹ Y =Qd /Pm =U ∫dayI(t)d t /Um Im . (4) LÊ4Âÿ20°¥ ª.ʨsc35122 dÖAÈýð, T160 -36ÖAÈýð,¨çÈ »3 ù¸Á C, Ù j,©:d、ÖA þ ?ÈýFq1ÿ q?È 1 227 âEsY©dÖAÖA þ ?ÈýFq Å ¼? Hq/¥9?È .¹ 1 ñ Ì¥1 ÿ q?È ,¨%çýTÈâ,© B HW¥ ½ H ,ô T(3)Í »¤ HW =¥?È , Ï∫ t2 t1 I(t)dt¹½ H .© %çýTÈâ, ®N Ø HW¥?È . L î¨dÖAÈý ð-çÿ q¹15W,ÖA þ ?Èýð-çÿ q¹15W.¹r%çýTÈ⥠“¥,¨ç ÈâÈ0 Eµ,© È ^ Âm1.®çÈâÈ 0µ E¹È Þ¥ÿ ?, a - b ¥Èâ× çM, Û; ¥] H YMÄ¥?ÈÈ @△I0Y VÈ0µÈ ^¥vÿ q5 Û £ [ £ ? Û?, V7 E¹È Þ¥ÿ ?. m1 ° @½ H9 ¥Âm Fig.1 Circuitdiagram ofmeasuringDC Ah L ¥Â *]“¥N ,ÿ q (¹15W, sY© dÖA þ ?ÈýÖA þ ?ÈýF q¥?È .½ H9¥ýTÈ÷ 6 !. ¹ ]; /: c½ H ,¨çÈâs ¥ZE,  |Ï?,çÈâ |6.3 V; d?, çÈâ |12.65 V.“ V[ P þ ?ÈýÐ ý T Kvÿ q {ĸÍ.ô Q =U ∫I1(t)dt +U ∫I2(t)dt +… , V[sY Ø îµ|Ï? d?¥9?È ° (? È 1ÿ q?È . 2 实验结果及分析 L¹30 d, Ï d?|Ï?ò15 d.ô È0 Eµ° @½ H9Fî¥?È © Â# LZE,©¤ dÏ?dÖA þ ?Èýð ÖA þ ?Èýð¥1ÿ q?È . d?[# þ ;° /,dÖAÖA þ ?Èýð¥ 1ÿ q?È sY¹4.73W h /(W d)4.01W h /(W d); |Ï?, Ð;、 Û ;v /,d ÖAÖA þ ?Èýð¥1ÿ q?È sY¹ 1.19W h /(W d)0.94W h /(W d). á Ì ª¹, d?,dÖA þ ?Èý Ùi ; h, i ;v /,ÈýðÑ Ú, ®¿dÖA þ ?Èý¥µÑ“ 1ÖA þ ?Èýl¤ , OÚÑdÖA þ ?Èýµ|T ¨, Vs·h; h.N,dÖA ¥Ì{ z1ÖA z, î[dÖA þ ?Èý« 7 ^Èâ Vr0.8 V,7ÖA þ ?Èý8 7 ^ÈâÇÿ0.58 V, ÿ qM] H,dÖA þ ? ÈýVC÷z¥È È ?.yN, ; /dÖA þ ?Èýð1ÖA þ ?Èýð¥1 ÿ q?È v. Ð;/CÕµs¥ö1ðy ¿, þ ;¥ Û ; öîs]¿° ;, ¡[1] þ ¥ Û ; 550 ～ 600 nm,; öv dÖA þ ?Èýµ æ; ÂT i Ð Û ; Ð i =B“,¨;§; öv E÷ ? ª üÙ5 (m2). W¸ V 3 ?÷[ “? ¥“ þ ?Èý kÈ_” É £. m2 ;§ öÐa-Si、 c-SiÈý¥; ö 2 ù Fig.2 Sensitivity of spectrum of a-Si, c-Si solar cell and fluorescent light ®m2 Vn,dÖA þ ?Èý¥; öY 2 ù¥´ 550 ～ 600 nm,ÖA þ ?Èý¥ ; öY 2 ù´ÿ 700 ～ 900 nm,yN Ð Û ;/,dÖA þ ?Èý¥; ö 2 ù1Ö 228 ªvÐÐ Øýñ»22 A þ ?Èýz¤ ,dÖA þ ?ÈýVC÷ z¥;ÈÐ ?,?Èr ?÷Ú.V1¹dÖA ÖA þ ?Èý ;§/¥;+¥1 . V1 dÖA þ ?ÈýÖA þ ?Èý ;§/¥;+ Table 1 PV properties ofamorphous silicon solar celland monocrystalline silicon solar cell lighted by fluorescent lamp ÈýÕ ËU oc /V Jsc/(μA cm -2) Pm/(μW cm-2) FF a-Si 0.42 28.7 7.8 0.65 c-Si 0.28 35.9 5.2 0.51 ÿ:Uoc¹ 7 ^Èâ;Jsc¹ ^È @ á;Pm¹Kv {ÿ q á ;FF¹A y0;;vHq¹;300 lx. V2 ÕÈý ° þ ;/¥;+ , |Ï Ð Û ;/,dÖA þ ?Èý1 1 ÖA þ ?Èý¥ÿ q?È v. V2 dÖA þ ?ÈýÖA þ ?Èý ° þ ;/¥;+ Table2 PV properties ofamorphous silicon solar cell andmonocrystalline silicon solar cell irradiated directly by intensive sun light ÈýÕ ËU oc /V Jsc/(mA cm-2) Pm/(mW cm-2) FF a-Si 0.80 12.8 6.7 0.65 c-Si 0.58 31.6 13.2 0.72 ÿ: þ ;v¹100 mW cm-2. 结 语 ÓÊ | µ z ¥dÖA þ ?Èýð iÜ×Ä) Ø, È ?X s hi t¿×ç. YV LdÖA þ ?ÈýðÖA þ ?È ýð M]Hq/¥1ÿ q?È É© k1, ²TV ü, Âÿ20°¥ ª, d? ;v / |Ï? Ð Û ;/,dÖA þ ?Èýð¥ 1ÿ q?È (v¿ÖA þ ?Èý¥1ÿ q? È , ª ü ° ;/ Ð¥ Û ;Ìâ/, dÖA þ ?Èýð¥?Èr ?ª¿ÖA þ ? Èýð. “ -,dÖA þ ?Èýð¥ 3Áî ÿ ¹ÖA þ ?Èýð¥60%,yN,N1Ú¥ dÖA( ) þ ?Èý µ ¥ gÆ -ß. IÓD: [ 1] Christian N.;1 : xÝ 2 îS¥11Õ; Fq/ 1 [ A].»17½ xÝ; þ ?öp Ó“[ C] . D: dÃvÐ, 2001 (Óñ). [ 2] ., M,¦ÉL. þ ? æ¨/ [M] . Ø:ÄÐýñ , 2005. 286-298. [ 3]¿ ¡ v. þ Èý gÆCØ°á[ R].Ø: oÌâÁ/ W¸ÏS V 3 ?÷ 7?[ “÷ i, 2004. Abstract:1000-2618(2005)03-0228-EA Comparison of specific yield of solar cellassemblies madefrom amorphous silicon and monocrystalline silicon CHAI Jin-long1, LIYi2, andHU Sheng-ming2 1)College ofEngineering and Technology Shenzhen University Shenzhen 518060 P. R. China 2)Shenzhen Trony Science and TechnologyDevelopmentCo Ltd, Shenzhen 518029 P. R. China Abstract:The poweroutputabilities ofamorphous silicon andmonocrystalline silicon solarcellassemblieshavebeen »3 ù¸Á C, Ù j,©:d、ÖA þ ?ÈýFq1ÿ q?È 1 229 investigated experimentally. A powermeasurement devicemadeupw ith an electronic simulation load and aDC am- pere-hourmeterhas been designed, and amore straight forward specification of the poweroutput abilities has been proposed as the specific yield. The experiment results show that the specificyield generated by amorphous silicon so- lar cellis alwaysmore than thatgenerated bymonocrystalline silicon, wheneverthe solarcell is irradiated directly by sunlight in sunny days or is put in the situation of low dispersion light in rainy days. Key words:amorphous silicon;monocrystalline silicon;solar cell;specific yield;electronic simulation load;dis- persion light;low intension light;PV-property References: [ 1] Christian N. PV-compare:D irect comparison of eleven PV technologies at two locations in Northern and Southern Eu- rope [ A]. Proceeding of the Seventeenth European Photo- voltaicSolarEnergy Conference [ C]. Munich:University ofOxford, 2001. [ 2] LUO Yun-jun, He Zi-nian, W ang Chang-gu.i U tilizing TechnologyofSolarEnergy [M]. Beijing:ChinaChemical Industry Press, 2005. 286-298 (in Chinese). [ 3] YU Pei-nuo. Survey ofStatusQuoofFilm SolarCellM arket [ R] . Beijing:ChinaReproducible Energy SourceDevelop- mentO ffice ofG lobe EnvironmentFund W/ orld Bank, 2004 (in Chinese). 【ÏÓ3I: Ù ;Ó3I:Ï ï】 e ß ª g½v ï ô# SÐÈ M 近年来, 深圳市不断加大科普投入, 提升市民素质. 2004年举办全市性的科普活动 68次, 投入科普经费 2 073万元, 按当年常住人口 598万人计算, 人均科普经费支出 3.47元. 2003年投 入 1 709万元, 按照当年常住人口 557万人计算, 人均科普支出 3.07元. 深圳市除了承办每年一度的中国国际高新技术成果交易会和深圳国际文化产业博览会这两大 科技文化盛典外, 目前还建有深圳科学馆、宝安科技馆、深圳市少年宫和深圳市少儿科技馆等大 型科技馆, 建筑面积超过 78 000 m2. 其中, 2004年落成的深圳市少儿科技馆建有 “能源天地、 科普王国、美丽家园和生命探索”四大主题科技展馆, 以及 “4D动感影院、球幕影院” 两大科 普电影院. 200座的科普报告厅和 2 000多平方米的科技展厅. 另外, 深圳市的主要新闻媒体也开设了科普宣传栏目, 如深圳电视台的 《神奇的地球》、深 圳电台的 《快乐反斗星》节目等, 以宣传生活中的科学和科学发明、大自然奇迹等内容, 受到广 大市民的欢迎. (坪 梓)
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