硅片不良片判定

Date: 2010/02/04不合格樣品參考圖片 / 定義Chips缺口 / 崩邊No V-type sharpchipLength of edge chip≦ 5mm,Depth ≦ 0.5mm,No. of chip ≦ 3ICOS PV WaferInspectorSaw mark切割線痕 ≦ 15μ m (Depth)1. 目視檢驗2. 使用 SJ-201 量測Crack and pinholes裂痕與針狀列口None不可有ICOS MicrocrackInspectorMicro-crackInclusionsSurfaceCleanliness表面潔淨度As cut and cleaned,No stains, scratch,contamination,watermark andfingerprints表面須清洗乾淨 , 無可見斑點 , 玷汙及化學殘留物 ContaminationsICOS PV WaferInspectorStandard Wafer Specification外觀檢驗項目 檢驗規格 檢驗工具Micro-crack,pitting holesand inclusions內部微裂痕 , 凹陷與內含物Non-penetrating,None penetratingmicro crack,inclusions andholes 不可有ICOS MicrocrackInspector2F-11, No.32, Jiajheng 9th St., Jhubei City, Hsinchu County 302, Taiwan R.O.C.Page 1 of 3Angle betweensquare sides直角角度90 ± 0.3 deg. - ICOS PV WaferInspectorBevel edgewidth(hypotenuse)斜邊長1.5 ± 0.5 mmBevel edgeangle斜邊角度45 ± 10 deg.Length of waferedge邊長156 ± 0.5 mm ICOS PV WaferInspectorThickness厚度 200 ± 20 μ m Semilab WLT-5TTV厚度變異數 ≦ 40 μ m Semilab WLT-5Bow彎曲度 ≦ 50 μ m 非接觸電容式測試儀Warp/Warpage撓曲度 < 100 μ mDopant摻雜型態 P型 - Semilab WLT-5Resitivity電阻率 0.5 Ω -cm - Semilab WLT-5Lifetime少子壽命≧ 1.0μ s (wafer-level) - Semilab WLT-5電阻尺寸Page 2 of 3Carbonconcentration碳含量≦ 1x 1018 atms/cm 3 -Oxygenconcentration氧含量≦ 8 x 1017atms/cm 3 -其他 開箱破片 一片換一片 -Seller BuyerDazz Sun Energy Industry Company LimitedDate: Date: February 4, 2010Please signed back if agreed above standard specification 電阻Page 3 of 3