杜邦的N型23.5%量产效率的金属化解决方案

Metallization Paste for N-type Solar Cell Mass Production Toward 23.5% Efficiency DuPont Photovoltaic Solutions June, 2019 2 • Outline • Dupont Photovoltaics Solution • Metallization for N-type Cell FS- PV3Nx • Metallization for N-type Cell BS- PV6Nx OUR EVOLUTION OVER TWO CENTURIES 3 1936 – LUCITE® 1939 – NYLON 1903 – EXPERIMENTAL STATION 1915 – PYRALIN PLASTICS 1917 – MAKING DYES 1880 – FIRST DYNAMITE 1802 – E.I. DUPONT 1961 – TEDLAR® 1962 – LYCRA® 1965 – KEVLAR® 1952 – MYLAR® 1923 – CELLOPHANE 1924 – RAYON 1924 – FILMS BUSINESS BEGINS 1928 – CHEMICAL EXPANSION 20001950190018501800 1949 – ENGINEERING POLYMERS 1972 – ELECTRONICS EXPANSION 2003 – SOLAE JOINT VENTURE 1966 – TYVEK® 1967 – CORIAN® 1967 – NOMEX® 2000 – SORONA® BIO-BASED POLYMER1804 – FIRST SALE OF BLACK POWDER 1805 – CORE VALUES 1999 – ACQUIRES PIONEER HI-BRED 2011 – ACQUIRES DANISCO 2012 – ACQUIRES 100% OF SOLAE 2012 – PLENISH® 2013 – COMPLETES SALE OF PERFORMANCE COATINGS BUSINESS 2013 – HOWARU® PROTECT 2014 – LUMIGEN® 2014 – OPTIMUM® ACREMAX® 2015 – SPIN-OFF OF CHEMOURS 2015 – ZORVEC® 2016 – HOWARU® SHAPE 2017 – PYRAXALT™ “ Yo u c o u l d t e l l t h e s t o r y o f t h e d e v e l o p e d w o r l d t h r o u g h t h e m a t e r i a l s t h a t D u P o n t i n v e n t e d o r c o m m e r c i a l i z e d . “ F O R T U N E M A G A Z I N E 27 Companies that Changed the World AUGUST 2017 EXPECTED CLOSE OF PROPOSED MERGER 3 1802 2019 1805 – CORE VALUES 1939 – NYLON 1961 – TEDLAR® 1965 – KEVLAR® 1980S – SOLAMET® Alternati ve Wafering Higher Quality PERC np PERC n-PERT IBC LDE MBB … SE-PERC Bi-facial PERC MBB Alt. doped wafer PERL HJT MBB Contact- passivated HJ-BC Thinner MBB HJ-BC Thinner Larger Square Thinner SE&SB MBB Contact- passivated Thinner DWS cut MCCE PERC MBB … BSF c-Si Solar Cell Efficiency Evolution Mono CellMulti Cell 2019 18 19 20 21 22 23 24 25 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 Mo no Ce ll E ffic ien cy (% ) 5 DuPont continues to be an industry pacesetter of innovation by introducing leading performance pastes that deliver greater solar panel efficiency and power. High Efficiency LDE & PERC Solamet® PV17x, 18x, 19x, 20x, 21x, 22x PV3N3 Inorganic Formulation Innovation & Ultra Fineline Capability PV6N1 New Generation Paste for Contacting TOPCon Structure with Various Topography Ncell Solamet® PV3Nx, PV6Nx HJT Solamet® PV4xx Back Contact Solamet® PV93x Solar Cell Efficiency Evolution New Evolution of c-Si solar cell mass production efficiency (by Y2020) 21% 22% 23% 24% N-PERT Current N-PERT： 22% +~0.15% Wafer improvement 1 1 ohm*cm 1ms → 1 ohm*cm 2ms +~0.15% FS fine line & diffusion 40um→35um +~0.5% Optimize RS recomb. 150fA/cm2 → 15fA/cm2 +~0.15% FS fine line & diffusion 35um→30um ~22.8% Entitlement Remained for n-TOPCon Cell in Mass Production N/TOPCon ~23.7% +~0.5% RS TOPCon *RS Rcomb. 15fA/cm2 → 5fA/cm2 RC Rcomb. 1000fA/cm2 → 100fA/cm2 +~0.25% FS Ag paste inorganic innovation FC Recomb. 1000fA/cm2 →500fA/cm2 *Simulation was done by Quokka Require Ag Paste innovation 7 • Outline • Dupont Photovoltaics Solution • Metallization for N-type Cell FS- PV3Nx • Metallization for N-type Cell BS- PV6Nx void glass Interfacial (IF) Glass Silicon Sintered Ag Particles Z. Rick Li • Silver particles: sinter to form low resistivity conductor lines • Frit: typically an inorganic oxide powder composition that • Etches SiNx ARC • Strongly influences the Ag-Si interfacial electrical contact • Affects adhesion between Ag and Si layers • Organic vehicle: • Enables fine line printing and provides green strength • Carrier which dominates rheology property of a paste for screen printing Challenges: • Incomplete nitride removal • Thick interfacial glass • Emitter damage (over etching, large Ag crystallites) • High resistivity, poor sintering • Poor adhesion What is the Screen-printing Metallization Paste? Major Challenges Remain for n-type FS Metallization 9 • Tradeoff between recombination and contact resistivity needs to be resolved for boron emitter contacting to reach its efficiency potential • Metallization induced recombination (J0,metal) on the FS boron-doped emitter needs to be reduced by 2X • Reduce contact resistivity rc to 5% laydown saving Organic Innovation • Excellent paste transfer and production yield improvement • Enables fineline screen opening 23% cell efficiency • J0,metal from the conventional BSF structure needs to be reduced by 3X • Reduce J0,BSF to 23.5% efficiency for N-type cell mass production remained. DuPont continues to set the pace of innovation to tackle the challenge. Copyright © 2019 DuPont and Dow. All rights reserved. The DuPont Oval Logo and DuPont™ are trademarks of E. I. du Pont de Nemours and Company or its affiliates. The Dow Diamond Logo, Dow™ are trademarks of the Dow Chemical Company or its affiliates. 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