Double printing metallization paste ...-金光耀

Dupont Photovoltaics Solutions Dr. Guangyao Jin Dupont PVAM Technical Team Nov. 2018 DuPont Double Printing Metallization Technology for P type PERC Mono SE D u P o n t E l e c t r o n i c s Rsheet below 115 Ω/sq to form good contact. *Assuming bulk lifetime is 300us metallization at 885C Co ntac t r esi sti vity (mo hm cm 2 ) SE ΔJsc = +0.3 mA/cm2 Δη = +0.3% Homogenous Diffusion Efficiency limited by Jo,m - Contradiction requirements from doping concentration for LDE Emitter, efficiency limited by Jo,m - Selective Emitter needed D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential Finger SE area *Heavily-doped area, melting of pyramid top The SE area has a relative flat curve in the ECV contacting area. So, it becomes relatively easier for the contact. PVD1X是针对 SE特殊工艺专门开发的底层浆 料，通过无机组分的革新大幅提升接触和过 墨性 1st Layer PVD1X: Innovative frit system tailored for PERC SE Less Jo,m, significant Voc benefit D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential Finger SE area *Heavily-doped area, melting of pyramid top PVD1X design concepts: • blending some frits with less etching power, which reduces the damage to Si substrate to improve the Voc. 创新的玻璃组分，降低界面处的金属复合，提升 Voc • The new frit package’s line spreading is better controlled, and there is some Isc gain. 新玻璃烧结过程中控线更好，电流增益明显 • The new 1st layer frit has better compatibility with 2nd layer, which led to lower Rc. However, with narrower line width, there is less contacting area, and FF has some trade-off. 考虑到 2次印刷 2层玻璃烧结过程中会互扩， PVD1X新玻璃跟上层 PVD2X无机具有更好的兼 容性，最小化 floating组合对 FF的影响 1st Layer PVD1X: Innovative frit system tailored for PERC SE Less Jo,m, significant Voc benefit 典型的 PERC SE ECV曲线 D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential S a m p l e o p e n i n g P V D 1 xL a s t G e n 3 63 33 02 72 43 63 33 02 72 4 4 0 3 5 3 0 2 5 2 0 1 5 1 0 5 R g l 6 .8 6 5 7 .4 5 8 .7 6 9 .0 6 1 0 .8 5 5 7 .5 0 5 7 .7 9 8 .8 1 9 .5 9 1 2 .8 7 B o x p l o t o f R g l By innovative formulation design, PVD1x and PVD2x demonstrate excellent fine-line printability. Last Gen Package PVD1x + PVD2x By optimizing two-layer’s printing compatibility, line morphology is obviously improved. 1st Layer PVD1X: New organic system enable better fine-line printability and two-layer compatibility D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential Busbars A+A/A+A’ Fire-through Package: Easy operation for the production + + A+B Floating Package: With extra Voc gain from busbar A A A B  New improvement: • Lower Jom and higher Voc • Better contact performance  New improvement: • Better two-layer frit combinations with improved contact • Higher adhesion than last generation Busbars Advanced Frit Package: Lower Contact Resistance/Better Two-layer Frit Compatibility D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential With the lower laydown and thinner busbar, the need for higher ADH of 2nd layer is high. Upgrading from previous PVD2B system:  High ADH glass frit  Blending of silver powders for better conductivity and fine-line paste transfer  Vehicle modification for better fine-line printing ADH PVD2B 2.0-2.2 PVD2X 3.2-3.4 Excellent adhesion even with low laydown, better fine line printability 2nd Layer: Better fine line printability with excellent adhesion Better packing of silver powders D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential Solamet® PVD1x+PVD2x Package: Excellent IV Performances and Higher Adhesion • The new PVD1x+PVD2x package showed +0.1% eff. gain to last generation packages, on PERC mono cells. • The innovative glass frit in new PVD2x, the 2nd layer paste enabled +1N higher adhesion than last generation without sacrificing the IV performances. D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential Texturing Diffusion, SE Annealing Dielectric Coating: AlOx, SiOx, SiNx Printing & Screen Firing Rear Al & Tabbing Customized Metallization Solution 0.15% entitlement by 15um less ultra-fine printing for less shading and higher Isc 0.15% entitlement by Less metal-induced recombination for higher Voc + Floating BB design 0.1% entitlement by Lower contact resistance for higher FF Future of Double Printing Paste For PERC Mono SE Customized Metallization Solution:  Texturing: Printability, Contact, Adhesion  Diffusion, LDSE, Annealing: Contact  Dielectric Passivation: Fire through, contact  Printing & Screen: Printability, Finger morphology  Firing Window: contact adhesion  Rear Al and Tabbing: compatibility D u P o n t E l e c t r o n i c s & I m a g i n g DuPont Confidential 21 22 23 24 Multi BB + ultra fine finger Advanced low cost metallization tech. Base 1ms. Initial PERC LDE PERC LDSE Passivated Contact and/or Boron doped Al contact Multi Wire Finger 10um Passivated Contact Bulk Lifetime impr. LDSE Fine line LDE Key Approaches: • Selective Emitter • Higher Bulk lifetime • Break through on Passivated Contact + Metal Paste • Mass Producible 10um ultra fine line Cel l Ef fic ienc y % 23% Cell Efficiency 25 Fine line, Floating busbar P PERC cell Efficiency Improvements Roadmap associated with Metallization Technology 21 Dupont confidential photovoltaics.dupont.cn ©2017杜邦公司版权所有。杜邦椭圆形标志、杜邦 ™ 以及所有 标注有 TM或 ®的产品和品牌均是杜邦公司或其关联公司的商 标或注册商标。