协鑫-Photovoltaic Crystalline Wafers Part2

Photovoltaic Crystalline Wafers - Part2: Specifications for Geometric Characteristics 光伏晶体硅片 第 2部分 : 几何特性要求 GCL，2018.10 01 Wafer Standard system 硅片 标 准体系 02 Geometric Characteristics standard 硅片尺寸 标 准 03 Progress on the project 标 准 进 展 04 Work Plan for the Next Step 下一步工作 计 划 Outline 目录 1、 Wafer Standard system 硅片标准体系 ➢ Current related Wafer Standards 相关标准 China ✓ GB/T 26071《 Mono-crystalline silicon wafers for photovoltaic solar cells 》 , has been revised in 2017. ✓ GB/T 29055《 Multi-crystalline silicon wafer for solar cell》 ， is currently under revision led by GCL and is expected to be completed by the end of 2018. SEMI ✓ SEMI PV22-0817《 Specification for Silicon Wafers for Use in Photovoltaic Solar Cells》， Revised by SEMI PV Silicon Wafer Task Force in 2016. ✓ Contains all performance specifications for mono- crystalline and multi-crystalline silicon wafers. 1、 Wafer Standard system 硅片标准体系 -1 General specifications -2 Specifications for Geometric Characteristics -2-1 Test method for geometric dimensions of silicon wafers -2-2 Test method for thickness and thickness of variation of silicon wafers -3 Specifications for Electrical Characteristics -3-1 Test method for conductivity type of wafers -3-2 Test method for measuring resistivity of wafers with … -3-3 Test method for minority carrier diffusion length by … -3-4 Test method for measuring effective minority carrier lifetime of wafers by … -4 Specifications for Chemical Characteristics -4-1 Test method for interstitial oxygen content of wafers with … -4-2 Test method for substitutional carbon content of wafers by … -4-3 Test method for measuring metal content of wafers by … -5 Specifications for Crystal Characteristics -5-1 Test method for measuring crystallographic orientation of wafers with … -5-2 Test method for measuring dislocation density of wafers by … -6 Specifications for Surface Quality Characteristics -6-1 Test method for measuring warp on silicon wafers by … -6-2 Test method for bow on Silicon wafers by . -6-3 Test method for surface flatness of Silicon wafers -6-4 Test method for measuring surface roughness and saw marks of Silicon wafers -6-5 Test method for measuring surface defects of Silicon wafers -6-6 Test method for measuring microcrack defects of Silicon wafers -7 Specifications for package of silicon wafers Photovoltaic Crystalline Wafers 2、 Specifications for Geometric Characteristics 几何特性要求 • This standard specifies the standardized geometrical characteristics of crystalline silicon wafers based on large-scale production of crystalline silicon wafers and also provides recommendations on the future development of photovoltaic silicon wafer size to avoid the waste in production. 本 标准 规定了 光伏用晶体硅片的 标准 几何特性 要求， 并对光伏硅片尺寸 的未来发展给出了建议。 ➢ Scope 范围 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Main Content 主要内容 Square Wafer Dimensions 方形硅片外形尺寸 Pseudo-Square Wafer Dimensions 准方形硅片外形尺寸 Recommended dimensions 推荐尺寸 Thickness and Total Thickness Variation 厚度及 总 厚度 变 化 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Square Wafer Dimensions 方形硅片外形尺寸 Symbol in Figure 1 Dimensions Dimension Name A (mm) Wafer Edge Length B (mm) Chamfer Length β (°) Right Angle Nominal Size (mm) 100.75 100.75±0.25 1.5±0.5 90±0.3 125.75 125.75±0.25 1.5±0.5 90±0.3 156.75 156.75±0.25 1.5±0.5 90±0.3 • The allowable dimensions of square wafers are indicated in Figure 1 and Table1. • Square wafers have straight chamfers at the corners. The typical chamfer angle , α, between the wafer edge and the straight chamfer is 45° , but there is no specification for this angle. • If the wafer edge length is changed, it is recommended that the increase or decrease step be an integral multiple of 1 millimeter. • The chamfer width , B, is specified to be identical on all four corners. 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Pseudo-Square Wafer Dimensions 准方形硅片外形尺寸 Symbol in Figure 2 Dimensions Dimension Name A (mm) Wafer Edge Length D (mm) Diagonal β (°) Right Angle Nominal Size (mm) 100.75 100.75±0.25 126±0.25 90±0.3 125.75 125.75±0.25 151±0.25 90±0.3 156.75Ⅰ 156.75±0.25 205±0.25 90±0.3 156.75Ⅱ 156.75±0.25 210±0.25 90±0.3 • The allowable dimensions of pseudo-square wafers are indicated in Figure 2 and Table2. • Pseudo-square wafers have round chamfers at the corners. The length of round chamfer projected to the edge, C , requires the same for all corners. • If the wafer edge length is changed, it is recommended that the increase or decrease step be an integral multiple of 1 millimeter. 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Thickness and Total Thickness Variation 厚度及总厚度变化 • The center point wafer thickness (or average wafer thickness) shall be specified. • If the thickness is changed, it is recommended that the increase or decrease step be an integral multiple of 1 micron. • The total thickness variation within a wafer shall be less than 15% of the specified wafer thickness. 3、 Progress on the project 标准进展 ➢ Project process 立项介绍 • 2017, A New Work Item Proposal (NWIP) has been proposed as a Standard entitled “Photovoltaic Crystalline Wafers -Part2: Specifications for Geometric Characteristics” in PVQAT TG13. • 2018.04, China Electronics Standardization Institute (CESI) has adopted this proposal and is already in the process of submitting to the IEC. • 2018.10, Participate in IEC/TC82/WG8 meeting held in Busan, Korea, for standard discussion. 3、 Progress on the project 标准进展 ➢ Draft companies 起草单位 • UL • PASAN(Meyer Burger) • Hanwha Q-cells • vina solar • Photowatt • viridian solar • XXX 国外企业国内企业 • 保利协鑫能源控股有限公司 • 中国电子技术标准化研究院 • 西安隆基硅材料股份有限公司 • 晶科能源有限公司 • 阿特斯阳光电力科技有限公司 • 扬州荣德新能源科技有限公司 • 晶澳太阳能科技有限公司 • 瑟米莱伯贸易 (上海 )有限公司 • 江西赛维 LDK太阳能高科技有限公司 • XXX 3、 Progress on the project 标准进展 ➢ To be improved 待完善内容 • Given the change suggestion of the chamfer or diagonal of the silicon wafer when the edge width changes. • 给出硅片边宽变化时 ， 方形硅片倒角 、 准方形硅片对角线的变化关系或建议 。 • Briefly describe the test method with reference to the 62904-1 standard. •参照 62904-1标准对测试方法进行简述 。 4、 Work Plan for the Next Step 下一步工作计划 2018.12 Standard Draft 完成标准草案 2019.05 CD （ committee draft for circulation ） 形成委员会草案 2019.12 CDV（ committee draft for vote） 委员会草案投票 Thanks for contributions from all working group members and PV experts