掺硼纳米非晶硅的太阳能电池窗口层应用研究.pdf

掺硼纳米非晶硅的太阳能电池窗口层应用研究作者 李喆 ， 张溪文 ， 韩高荣 ， Li Zhe ， Zhang Xiwen， Han Gaorong作者单位 浙江大学硅材料国家重点实验室 ,杭州 ,310027刊名 真空科学与技术学报英文刊名 JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY年，卷 期 2009， 292被引用次数 0次参考文献 23条1. Adolf Christopher Hebling . Hans-Werner Schock Photovoltsic history,status and outlook 20032. Carlson D E . Wronski C R Amorphous Silicon Solar Cell 19763. Green M A Recent developments in photovoltaics 20044. Staebler D L . Wronski C R Reversible conductivity chages in discharge-produced amorphous Si 19775. Sokti Hazra . Swafi Ray Photovoltaic application of nanomorph silicon thin films prepared by plasmaenhanced chemical vadeposition 19996. Sukti Hazra . Swati Ray Nanocrystalline silicon as intrinsic layer in thin film solar cells 19997. Edelman F. Chack A. Weil R Structure of PECVD SiH films for solar cell application 20038. 陈庆东 . 张宇翔 . 郭敏 不同衬底上沉积硅薄膜的固相晶化研究 [期刊论文] -真空科学与技术 2008039. He Y L. Hu G Y. Yu M B Conduction mechanism of hydrogenated nanocrystalline silicon films 19991910. Akihisa Matsuda . Toshihiko Yoslddo . Sotoshi Yamasaki Structural Study on Amorphous-MicrocrystallineMixed-Phase SiH Films 19810611. Easwar Srinivasan . Gregory N Parsons Hydrogen elimination and phase transitions in pulsed-gasplasma deposition of amorphous and microcrystalline silicon 19970612. Robert J Hamers . Wang Yajun. Shan Jun Atomic-level spatial distributions of dopants on siliconsurfacestoward a microscopic undenstanding of surface chemical reactivity 199613. Beeman D. Tsu R. Thorpe M F Structural information form the Raman spectrum of amorphous silicon198514. 程光熙 拉曼布里渊散身 -- 原理及就用 200115. Swanepoel R Determnination of the thickness and optical constants of amorphous silicon 198316. Wemple S H Refractive-index behavior of amorphous semiconductors and glasses 197317. Ley,L Topics in applied physics 198418. 胡志华 . 忞显伯 非晶硅碳 a-SiCH 薄膜光学常数的透身谱表征 [期刊论文] -半导体学报 20050119. Tawada Y. Tsuge K. Kondo M Properties and strueture of a-SiCH for high-efficiency a-Si solar cell19820720. Hattorl Y . Kruangam D. Toyama T Highly Conductivep-type Microcrystalline SiCH Prepared by ECRPlasma CVD 198821. Miyajima S . Yamada A. Konagal M Highly Conductive Microcrystalline Silicon Carbide Films Depositedby the Hot Wire Cell Method and Its Application to Amorphous Silicon Solar Cells 200322. Akihisa Matsuda . Madoka Takai . Tomoniri Nishimoto Control of plasma chemistry for preeparing highlystabilized amorphous silicon at high growth rate 200323. Ambrosone G. Coscia U . Murri R Structural,optical and electrical charactefizations of μ c-SiHfilms deposited by PECVD 2005相似文献 1条1.期刊论文 傅广生 . 张江勇 . 丁文革 . 吕雪芹 . 于威 . Fu Guangsheng. Zhang Jiangyong . Ding Wenge. L Xueqin. YuWei 纳米非晶硅薄膜的界面发光特性 - 半导体学报 2007,28z1采用螺旋波等离子体增强化学气相沉积 HWP-CVD技术沉积了不同氢稀释比的富硅氢化非晶氮化硅 a-SiNxH薄膜 , 并利用光致发光 PL和光致发光激发 PLE谱技术对其发光特性进行了研究 . 结果显示 , 所有样品发光均表现为两个带的叠加 一个发光带随氢稀释比增大而发生蓝移 , 另一个发光带则固定在 2.9eV左右 . 前者关联于镶嵌在 a-SiNxH基质内非晶纳米硅颗粒的界面发光 , 后者来源于 a-SiNxH基质相关的局域态中电子和空穴对的辐射复合 . 并结合所沉积薄膜的吸收特性 , 分析了缺陷态和界面态对薄膜中非晶纳米硅界面发光特性的影响.本文链接 http//d.g.wanfangdata.com.cn/Periodical_zkkx200902002.aspx授权使用湖南大学 hunandx，授权号 6a1cd7af-76da-4000-90c0-9e0e00e8bc22下载时间 2010年 10月 13日