用于n+薄多晶硅钝化层接触的新型宽温度窗口银浆--贺利氏
n | Heraeus PV 1 n 2020/11/5 11/5/2020120 110 100 90 80 70 60 50 40 SOL950 Q3 2008 SOL9621H Q3 2014 SOL9117 Q1 2009 0.2 0.35 0.25 0.1 0.1 0.1 0.1 0.1 Ω ∕ “Great wall” “Low laydown” “Super Adhesion” “Double Print” “Fine line” “Mono” 0.1 “Blk-Si, PERC Mono 0.5 SE 0.1 2009 SOL9117 130um 2010 SOL9235 100um 2011 SOL9411 63um 2013 SOL9610 58um 2014 SOL9621 50um 2015 SOL9631 45um 2016 SOL9641 40um 2018 SOL9651 38um 202X SOL97XX 25um SE2.0 16um SE SOL9631C Q3 2015 SOL9641B Q3 2016 SOL9651 Q4 2017 SOL9661 Q1 2019 SOL9671 Q2 2020 SOL97XX Q2 202X SOL9610 Q3 2013 SOL9411 Q4 2011 SOL9235H Q3 2010 2020 SOL9671 34um 2 180 160 130 2019 SOL9661 36um 2008 SOL580 150um 11/5/2020 n | Heraeus PV Finger Opening um FS Ag Paste Laydown mg/cell 280-20 325-23 360-16 325-16 380-14 430-13 480-11 Knotless RemarkM6 wafer from 2019 11/5/2020 n | Heraeus PV 36700 6900 / 6800 / 9651B 9641B 9661B 9671B 9681 9691 6600 9651D / SOL 4 9360 P N 2017 2018 2019 2020 2021 2022 9652B2 9652B1 / A A’ or B N TOPCon / / 9641A 9661D / 9671D / 9651B2 9642A1/ B1 9642A2/ B2 AB AA’ / 9662B2 9662B1 9370 9380 9390 9400 9410 570 580 590 7100 N PERC PERC ULDE SE ULDE / / / J0,met / 7200 J0,met 600 7300 7400 7500 Poly 100nm Poly 50nm 610 / / / IBC 9720 n p 9730 9740 AB AA’ n | Heraeus PV 11/5/2020N-TYPE/TOPCON n | Heraeus PV 11/5/2020 5 TOPCON n | Heraeus PV 6 11/5/2020 7 POLY POLY Poly ≤ 100 nm Poly 100 nm FCA FCA Thin Poly-Si – 40 nm Thick Poly-Si – 300 nm ➢ Poly TOPCon ➢ Poly 50-150nm Poly ➢ Poly n | Heraeus PV 11/5/2020SOL7300 N-TOPCON 8 › N TOPCon 新一代高效N 型TOPCon 背面银浆 1. SOL7300 N TOPCon 4. SOL7300 Voc FF 2. SOL7300 Voc 3.SOL7300 SOL7300 SOL7200 SOL7300 Test on TOPCon cells with thin Poly layer Paste V oc mV J sc mA/cm 2 FF h Reference - - - - SOL7300 2.1 0.04 0.19 0.19 › Voc › › Poly 11/5/2020 n | Heraeus PV n | Heraeus PV 11/5/2020 9 Tem. SOL7300 Reference ST-50 ST-30 ST ST-50 ST-30 ST 9 8 7 6 5 4 3 2 1 0 rhoC[mOhmcm2] 6.01667 7.38333 2.40833 1.35417 1.21583 1.77917 Boxplot of Reference, SOL7300 n | Heraeus PV 10 11/5/2020 完全去除银和玻璃后的多晶硅在不同峰值烧结温度（设定温度分别为（a ）780 C 、（b ）800C 、 （c）820C ）下的 SEM 图像 J 0,met n | Heraeus PV 11 PERC-80100 720 SOL7200 Series EL SOL7300 series EL Heraeus 11/5/2020 EL n | Heraeus PV 11/5/2020 12 SOL7200 SOL7300 SOL7300 Voc SOL7200 For poly 50nm 7400 Series 9370 Series HERAEUS N-TYPE/TOPCON 13 9380 Series 9360 Series Advanced Cell 2016 2017 2018 2019 2020 2021 7100 Series 7200 Series Reduced J0met 9390 Series For n BS 7300 Series For poly 100nm 9400 Series Today Better printability Higher Voc Lower rhoc Improved Contact N-Type TOPCon › poly › › › › › N /TOPCon 11/5/2020 n | Heraeus PV n | Heraeus PV 11/5/2020 14
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