晶体硅太阳电池产业技术发展
1. 1. 2. 2. 3. 3. 24.7 24.7 20.3 20.3 1417 1417 13 13 16 16 42 41 13 4 48 37 10 4 50 35 10 6 52 36 7 5 0 20 40 60 80 100 1999 2000 2001 2002 ribbon thin film mono Si multi Si 42 41 13 4 48 37 10 4 50 35 10 6 52 36 7 5 0 20 40 60 80 100 1999 2000 2001 2002 ribbon thin film mono Si multi Si Multi Multi Si Si Advantages Advantages Wafer area increase Wafer area increase Pronounced cost Pronounced cost reduction potential reduction potential Fully squared Fully squared Challenges Challenges Development of 200 Development of 200 m m wafer and cell technology wafer and cell technology Mono Mono Si Si Advantages Advantages High efficiency potential High efficiency potential on thin wafers200 on thin wafers200 m m Thin wafer and cell Thin wafer and cell technology technology Challenges Challenges Degradation of solar cells Degradation of solar cells Reduced packaging Reduced packaging density in modules density in modules Cost reduction Cost reduction Best PV material still open question1. 1. HIT HIT OECO OECO Si ngl e-st ep emi t t er - groove di ffusion p BSF Rear metal T itanium dioxide coated front surface Pl at ed, l aser - grooved contacts n n p-silicon thin oxide 200 oxide rear contact finger “inverted“ pyramids p p p double layer antireflection coating PERL passivated emitter, rear locally-diffused cell structure. TCA oxidation on both front and rear surfaces to reduce surface recombination. BBr 3 rear diffusion in limited areas. This reduces the recombination at the rear contact areas, while maintaining low contact resistance. Double PBr 3 emitter diffusions reduce the recombination at the emitter surface and the emitter contact areas. Advantages of PERL Cells 1 Ω -cm Wacker FZ wafer with high minority carrier lifetime in the substrates. The inverted pyramid front surface reduces surface reflection and improves light trapping performance. Ti/Pd/Ag reduces contact area. ZnS/MgF 2 DLAR reduces surface reflection further. HIT HIT 20 20 OECO OECO ISFH ISFH OECO Obliquely Evaporated Contact solar cell structure developed at ISFH. PECVD deposited SiN is used for surface passivation, with low recombination front MIS metal contact. Emitter Emitter - - Wrap Through Solar Cell Wrap Through Solar Cell 19.8 19.8 17.7 17.7 Efficiency of crystalline silicon solar cells AstroPower Si-Film [[iv]] NREL 3/97 81.5 33.5 0.608 0.98 16.6 Si supported film University of Konstanz, BP Solar [[iii]] FhG-ISE x/03 77.7 35.9 0.632 144 17.6 Si large multicrystalline UNSW/Eurosolare [21] Sandia 2/98 79.5 38.1 0.654 1.09 19.8 Si multicrystalline FhG-ISE 218 m thickness [22] FhG-ISE x/04 78.6 38.8 0.653 1.00 19.9 Si multicrystalline FhG-ISE 99 m thickness [[ii]] NREL x/04 80.9 37.7 0.664 1.00 20.3 Si multicrystalline UNSW PERL [[i]] Sandia 3/99 82.8 42.2 0.706 4.00 24.7 Si crystalline FF JscmA/ cm 2 Voc V Area cm 2 Eff Cells2 2 25MW 90 180 270 360 450 540 630 720 810 900 0.1 0.3 0.5 0.7 0.9 p p- -n n Si Si SiHCl SiHCl 3 3 Si Si SiHCl SiHCl 3 3 Si Si Si Si Si Si View of the casting hall of Deutsche Solar AG View of the casting hall of Deutsche Solar AG Casted silicon block Casted silicon block 270 270 kg kg Silicon columns coming from one block Silicon columns coming from one block The novel open quartz tube diffusion system combines The novel open quartz tube diffusion system combines the advantages of the continuous processing typical for the advantages of the continuous processing typical for conveyor belt furnaces and cleanliness of closed quartz conveyor belt furnaces and cleanliness of closed quartz tube furnaces. tube furnaces. PECVD PECVD PECVD PECVD TiO2 TiO2 SiN SiN 50 50 80 80 150 150 / ASYS ASYS PC 1300 1300 / / 100 100 3 3 500 500 LFC LFC 70 70 20.7 20.7
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