solarbe文库
首页 solarbe文库 > 资源分类 > PDF文档下载

09-PECVD法制备石墨烯纳米片及其在太阳能电池中应用-程其进

  • 资源大小:2.05MB        全文页数:28页
  • 资源格式: PDF        下载权限:游客/注册会员/VIP会员    下载费用:5金币 【人民币5元】
游客快捷下载 游客一键下载
会员登录下载
下载资源需要5金币 【人民币5元】

邮箱/手机:
温馨提示:
支付成功后,系统会根据您填写的邮箱或者手机号作为您下次登录的用户名和密码(如填写的是手机,那登陆用户名和密码就是手机号),方便下次登录下载和查询订单;
特别说明:
请自助下载,系统不会自动发送文件的哦;
支付方式: 微信支付    支付宝   
验证码:   换一换

 
友情提示
2、本站资源不支持迅雷下载,请使用浏览器直接下载(不支持QQ浏览器)
3、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰   
4、下载无积分?请看这里!
积分获取规则:
1充值vip,全站共享文档免费下;直达》》
2注册即送10积分;直达》》
3上传文档通过审核获取5积分,用户下载获取积分总额;直达》》
4邀请好友访问随机获取1-3积分;直达》》
5邀请好友注册随机获取3-5积分;直达》》
6每日打卡赠送1-10积分。直达》》

09-PECVD法制备石墨烯纳米片及其在太阳能电池中应用-程其进

XIAMEN UNIVERSITY PECVD 法 制备石墨 烯纳米片及其在太 阳能电池中应用 PECVD produced graphene nanoflakes and relevant application in solar cells Guanhua lin(林冠华), Yazhou Qu, Bin Guo, and Qijin Cheng 程其进) College of Energy, Xiamen University, Xiamen City, Fujian Province, 361005, P . R. China. 2016.11.26, 12th CSPV , Jiaxing CONTENT 3 2 1 Basic properties of graphene Review of graphene-silicon solar cells Graphene nanoflakes prepared by PECVD and relevant application in solar cells 4 Conclusion I. Basic properties of graphene Molecular structure of graphene High resolution TEM images of graphene Graphene, a one-atom-thick planar sheet of sp 2 -bonded carbon atoms that are densely packed in a honeycomb crystal lattice. Fig.2 Unqiue properties of graphene I. Basic properties of graphene 2.1 The working principle of graphene-silicon solar cell Fig1 The working principle of Schottky junction II. Review of graphene-silicon solar cells 2.2 A typical structure of graphene-silicon solar cell n-Si absorb light GS a、p-type semiconductor b、transparent conductive electrode Fig.2 A typical structure of graphene-silicon solar cell II. Review of graphene-silicon solar cells 2.3 The advantage of graphene-silicon solar cell I. low power consumption II. low purity of silicon materials III.low cost IV.high PCE of GS solar cell II. Review of graphene-silicon solar cells 2.4 The reasons of restriction to promote PCE of GS solar cell I.The schottky barrier of GS(0.55eV) is far lower than the band gap of silicon1.12eV bigger reverse saturation current and lower open circuit voltage II. Review of graphene-silicon solar cells 2.4 The reasons of restriction to promote PCE of GS solar cell II.Large interface recombination between Si and graphene Isc、Voc、FF . II. Review of graphene-silicon solar cells 2.4 The reasons of restriction to promote PCE of GS solar cell III.The sheet resisitance of graphene is far higher than crystalline silicon emitter sheet resistance series resistance FF . II. Review of graphene-silicon solar cells 2.5. The way to promote PCE of GS solar cell 2.5.1 Chemical doping of graphene a 、SOCl 2 or HNO 3 doping of graphene a b Li Xinming,Xie Dan,Park H,et al.Ion doping of graphene for high-efficiencyheterojunction solar cells[J].Nanoscale,2013,5 1945-1948. I. series resistance II. the improvement of the Schottky junction II. Review of graphene-silicon solar cells 2.5.1 Chemical doping of graphene b 、Nanoparticle doping of graphene a b Xie Chao,Zhang Xiujuan,Ruan Kaiqun,et al.High-efficiency,air stable graphene/Si micro-hole array Schottky junction solar cells[J].J.Mater.Chem.A,2013,1 15348-15354 p-type doping of graphene II. Review of graphene-silicon solar cells 2.5.2 Interface passivation a 、Inorganic interfacial layers I. low interface recombination II. hole and electron-extraction material K.J. Jiao, X. L. Wang,Y. Wang, Y. F. Chen, J. Mater.Chem.C 2014,2, 7715. II. Review of graphene-silicon solar cells 2.5.2 Interface Passivation a b b 、Native interfacial layers Y . Song, X. M.Li, C. Mackin,X. Zhang, Nano Lett. 2015, 15, 2104 I. tunnel through the barrier II. recombine with electrons under illumination hole II. Review of graphene-silicon solar cells 2.5.3 Nanostructure design for light trapping (a ) (b ) I. low surface recombination II. the enhanced light absorption J sc II. Review of graphene-silicon solar cells 3.1 The preparation methods of graphene  Mechanical exfoliation  Graphene oxide reduction  Chemical vapor deposition  SiC epitaxial growth method III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 3.2 The disadvantages of graphene grown on CVD I. Graphene need to be transfered to the target substrates for further applicationns II. The growth temperature is far too high III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 3.3 Direct growth of graphene on Si substrates through PECVD Fig.1 RF-plasma enhanced horizontal tube furnace III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells Main advantages A lower substrate temperature A higher deposition rate Without using any catalyst Fig.2 aThe experimental flow chart ;bRaman spectra of graphene grown on Si substrates varying from different temperature Temperature ℃ Heating Cooling Growth of graphene I4A ; Time4min Temperature800-950 ℃ Time min III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 3.4 The experimental results a b 40sccm Ar 10sccm CH4 e e f g h h 3.4 The experimental results Fig.3a-d Raman maps of the D-band/G-band and e-f corresponding SAED patterns of graphene grown on Si substrates varying from 800 ℃to 950 ℃ III. Graphene nanoflakes prepared by PECV and relevant application in solar cells 800 ℃ 850 ℃ 900 ℃ 950 ℃ 800 ℃ 850 ℃ 900 ℃ 950 ℃ Fig.4a-d Raman maps of the 2D-band/G-band and e-h HRTEM images of graphene grown on Si substrates varying from 800 ℃to 950 ℃ 3.4 The experimental results III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 800 ℃ 850 ℃ 900 ℃ 950 ℃ 800 ℃ 850 ℃ 900 ℃ 950 ℃ III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 800 ℃ 850 ℃ 900 ℃ 950 ℃ 800 ℃ 850 ℃ 900 ℃ 950 ℃ Fig.5 SEM images of graphene grown on Si substrates varying from 800 ℃to 950 ℃ J. Wu, Y . Shao, B. Wang, K. Ostrikov, J. Feng, and Q. J. Cheng, Plasma Process. Polym. 2016 DOI 10.1002/ppap.201600029. 3.4 The experimental results Fig.6 a Optical transmittance spectra of graphene grown on quartz substrates and b sheet resistance as a function of growth time a b III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 3.4 The experimental results Fig.7 Fabrication process of TiO2-G-Si solar cells III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells 3.4 The experimental results Fig.8 a J-V characteristics of an as-fabricated G-Si solar cell and after TiO2 coating,respectively. b IPCE curves of a solar cell after different treatment step in pristine state G-Si ,after TiO2 coating,respectively. a b 6.1 3.5 III. Graphene nanoflakes prepared by PECVD and relevant application in solar cells IV. Conclusion  We provide a new way to produce graphene directly grown on the Si substrates for the application of solar cells.  Optimizing the thickness of anti-reflection coatings to achieve minimizing reflection for higher PCE. 1. J. Wu, Y . Shao, B. Wang, K. Ostrikov, J. Feng, and Q. J. Cheng, Plasma Process. Polym. 2016 DOI 10.1002/ppap.201600029. 2. Q. J. Cheng and K. Ostrikov, J. Appl. Phys. 115, 124310 2014. 3. Q. J. Cheng and K. Ostrikov, ChemPhysChem 13, 1535 2012. 4. Q. J. Cheng and K. Ostrikov, CrystEngComm 13, 3455 2011. 5. Q. J. Cheng, S. Xu, and K. Ostrikov, J. Mater. Chem. 20, 5853 2010. 6. Q. J. Cheng, E. Tam, S. Xu, and K. Ostrikov, Nanoscale 2, 594 2010. 7. Q. J. Cheng, S. Xu, and K. Ostrikov, Acta Mater. 58, 560 2010. 8. Q. J. Cheng, S. Xu, S. Y . Huang, and K. Ostrikov, Cryst. Growth Des. 9, 2863 2009. 9. Q. J. Cheng, S. Xu, and K. Ostrikov, J. Mater. Chem. 19, 5134 2009 Cover Image. 10. Q. J. Cheng, S. Xu, and K. Ostrikov, Nanotechnology 20, 215606 2009. 11.Q. J. Cheng, S. Xu, and K. Ostrikov, J. Phys. Chem. C 113, 14759 2009. 12. Q. J. Cheng, S. Xu, J. W. Chai, S. Y . Huang, Y . P. Ren, J. D. Long, P. P. Rutkevych, and K. Ostrikov, Thin Solid Films 516, 5991 2008. For further details please email Qijin.Chengxmu.edu.cn CONTENT 谢谢聆听 Thank you for your attention

注意事项

本文(09-PECVD法制备石墨烯纳米片及其在太阳能电池中应用-程其进)为本站会员(王保平)主动上传,solarbe文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知solarbe文库(发送邮件至401608886@qq.com或直接QQ联系客服),我们立即给予删除!

温馨提示:如果因为网速或其他原因下载失败请重新下载,重复下载不扣分。

copyright@ 2008-2013 solarbe文库网站版权所有
经营许可证编号:京ICP备10028102号-1

1
收起
展开