1 Suzhou Talesun-Yue Li

2019 What is next for PERC 2019.06.05 Suzhou Talesun Solar Technologies Co.Ltd. Yue Li Outline Company Profile Technical Background SiO2Poly Application Conclusions 表明光滑平整 1、 Company Profile Cell capacity 4 Gw Module Capacity 5GW Awards 50; Patents 260 Production Plants Four Talesun Cell Module Solar energy systems and solutions 2、 Technical Background Positive charge density SiOx and SiNx films Parasitic Shunting Negative charge density Al2O3 film No parasitic shunting Journal of Vacuum Science Energy Procedia 8 2011 307–312 ; Al2O3/SiNx stacks Seff planes; P-tail ECV of P doping profiles of investigated polySi/SiOx/Si structures The presence of an optimised iOx layer high quality surface passivation Physica Status Solidi a, 20171700058; Energy Procedia 124 2017 635–642; Energy Materials and Solar Cells 187 2018 76–81 3、 SiO2Poly Application Passivated Rear and Front ConTacts PeRFeCT Solar Energy Materials and Solar Cells 159 2017 265–271; Solar RRL, 2017, 171700040. SiO2 / Poly-Si on the front side Parasitic absorption losses about 0.5 mA/cm2 per 10 nm poly-Si layer thickness Passivated Rear and Front ConTacts SiO2 / Poly-Si formed underneath the front metal grid Current Crowding Current crowding the highest tunneling probability through the thin SiO2 PeRFeCT rear junction ＞ 26 front junction ～ 24 3、 SiO2Poly Application POLO‐IBC 26.1 on a 1.3 Ωcm p-type FZ wafer 24.6 on a 2 Ωcm n-type Cz wafer Solar Energy Materials and Solar Cells 186 2018 184–193 Progress in Photovoltaics Research and Applications, 20191. Polycrystalline Si poly-Si on oxide POLOjunctions- interdigitated back contact IBC solar cell POLO-IBC More complicated fabrication steps beyond the industrial application 3、 SiO2Poly Application Tunnel Oxide Passivated Contact TOPCon Better passivation iOx chemical passivation Heavily-doped poly-Sinlayer field- effect passivation Energy Materials and Solar Cells 187 2018 76–81 Schematic drawing of the bifacial n-type solar cell with n-polySi/SiOx contacts N-type Czochralski Cz substrate 1 Higher bulk lifetime higher open-circuit voltage 2 Unaffected by the light-induced degradation n-type c-Si devices will reach 25 of global PV production by 2027 25.1 efficiency with TOPCon from Fraunhofer ISE 3、 SiO2PolyApplication Tunnel Oxide Passivated Contact TOPCon TOPCon 20-200 nm 2 nm Applied Physics Letters, 2018, 1136061603 Progress in Photovoltaics Research 2 Laser edge isolation supplies a positive impact on Rsh, and a negative impact on the Jsc by reducing the current collecting area of the cell; 3 Simultaneous illumination and heating for the permanent deactivation of the boron-oxygen complex ; N-type Si SiO2 SiO2 P doped Poly P doped PolySiN x P-type Si SiO2 SiO2 B doped Poly B doped PolySiN x SiNx 1 TexturePolish 2 LPCVDSiO2Poly 3 P/B doping for N/P Silicon 4 Remove PSG/BSG 5 SiNx SiNx 2.6 fA/cm2 Symmetrical Structure 6 Firing 23.6 fA/cm2 3、 SiO2PolyApplication N type 1 4 Ωcm 2 Cz-Si wafers with 156.75 mm 3 thickness of 180 μm P type 1 1 Ωcm 2 Cz-Si wafers with 156.75 mm 3 thickness of 180 μm Our work 3、 SiO2PolyApplication Our work I-V parameters Isc Jsc Uoc FF Eta Rs Rsh IRev2 TOPCon solar cell 9.538 39.040 0.635 78.58 19.49 0.0072 11.82 6.43 P-type MONO PERC 9.806 40.13 0.668 80.77 21.64 0.0021 719.13 0.08 The front side of TOPCon solar cell based on P-type silicon J0557 fA/cm2 J0252 fA/cm2 4、 Conclusions 1 The surface recombination strongly influence the solar cell performance; 2 SiO2 / Poly-Si for carrier selective with different c-Si devices can provide better passivation via chemical passivation and field-effect passivation; 3 SiO2 / Poly-Si for carrier selective can reach the limiting efficiency. Thanks for your attention 苏州腾晖光伏技术有限公司致力于成为 全球领先的产品 设计、研发、制造、应 用 一体化的方案提供商