B309+银掺杂的铜铟镓硒薄膜和器件性能研究+王晨

Fig.4 a PL spectra of the absorbers with different AAC of A0–A6, respectively. b The PL spectrum of sample C6, in which the Ag in A6 is replaced with the equivalent amount of Cu. c The value of GGI and Eg with different AAC. 新能源材料制备与加工/Preparation and Processing of New Energy Materials 银掺杂的铜铟镓硒薄膜和器件性能研究 Effects of silver-doping on CIGS and Device Performances Chen Wang a , Daming Zhuang* , a , Ming Zhao a , Yuxian Li a , Jianyong Zhai a , Hao Tong a a School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, P. R. China Email w-c17mails.tsinghua.edu.cn Experimental Results and discussion 样品制备  所有预制膜均采用磁控溅 射法制 备，退 火工艺 参照参 考文献 [2] 。  相关样品成分表 Introduction 铜铟镓硒 （CIGS ） 太阳电池是具有广阔应用前景的薄膜太阳 能电池之一 。 为了进一步提高其在能源市场中的占有率， 首先需 要提高CIGS 器件的性能。 而提高薄膜质量， 钝化载流子复合是提 高器件性能的一个重要途径 。 近年来，Ag 元素的掺杂由于能够提 高吸收层带隙、 改善薄膜结晶性等影响， 受到CIGS 和铜锌锡硒 （CZTS ） 器 件研究者的广 泛关注和研究 。 但对于Ag相关影响的 原 因并未阐述清楚。 本文提出使用磁控溅射法制备Ag 薄膜和CuInGa前驱体， 之后 进行硒化退火制备吸收层与电池 。 研究了Ag 掺杂对薄膜的结晶性 的影响， 并探究了Ag 促进结晶性提高的原因。 研究并分析了Ag 掺 杂对电子学缺陷、薄膜与 器件质 量的影 响 [1,2] 。 Sample ID A0 A1 A2 A4 A6 C6 I/III 0.843 0.849 0.856 0.869 0.881 0.881 AAC 0 0.008 0.015 0.030 0.044 0 Fig.1 The surface and cross-sectional SEM images of absorbers with different AAC of a A0, b A1, c A2, d A4, and e A6, respectively. f presents the surface and crosssectional SEM images of the sample C6, in which the Ag in A6 is replaced with the equivalent amount of Cu. Fig.2 DSC patterns of a-1 CuSe, b Ag2Se, c CuInSe2, d AgInSe2, a-2 Cu2Se. Fig.3 a The Raman spectra of the sample A20 and sample C20. b The XRD patterns of the sample A0–A6, respectively. c FWHM values calculated from b. Fig.5 a Typical J-V characteristics of the representative solar cells with different AAC of A0–A6. b EQE spectra of the solar cells with different AAC of A0–A6. c VOC, def of the cells with various AAC of A0–A6. VOC, def is the value of Eg/q- VOC, and the Eg is obtained by PL measurement. Every boxplot was based on more than five cells. Ref [1] 10.1016/j.ceramint.2020.09.069 [2] 10.1016/j.jechem.2021.08.008