Large-area Crystalline Silicon Nanostructured Solar Cells by MACE-黄增光

理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY Large-area Crystalline Silicon Nanostructured Solar Cells by MACE 10/11/2018 Zengguang Huang 黄增光 1 School of Science, HHIT淮海工学院 2 SPREE, UNSW新南威尔士大学 HHIT Huaihai Institute of Technology 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY HHIT Huaihai Institute of Technology Outline 1. Background 2. Large-area c-Si N/M-Strus based PERC 3. Large-area c-Si nano-inverted-pyramids based PERC 4. Summary 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY HHIT Huaihai Institute of Technology 1. Background 1 Silicon nanostructure arrays superiorities light trapping, absorption, compatible with current Si-based microelectronics; 2 Growing methods bottom-up and top-down； 3 Metal-assisted Chemical Etching bottom-up for photovoltaics simple, low-cost, large-size, compatible with current production line, recyclable; 4 Disadvantage large electrical loss; 5 Solutions morphology control optimizing height-diameter, compound nano/microstructures N/M-Strus, nano-inverted-pyramids etc., surface passivation SiO2, SiNx, ALD-Al2O3,TiO2 etc. 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY Mixed solutions HF/AgNO3/H2O2 c-Si N/M-Strus mc-Si N/M-Strus 2. Large-area c-Si N/M-Strus based PERC----N/M-Strus preparation 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 2. Large-area c-Si N/M-Strus based PERC ---- Device structure and process flow SiNx/SiO2 Si N/M-Strus based emitter Front surface Rear surface p-Si SiNx SiO2 aDevice of Si N/M Strus based PERC. b and c The enlarged schematics of the passivated n emitter and rear surface, respectively. d Process flow. e and f The cross-sectional SEM images of the stack layer SiNx/SiO2 passivated Si N/M- Strus emiitter and the rear surface, respectively. e f Zengguang Huang, et al., *Wenzhong Shen, Advanced Functional Materials, 2016, 26, 1892-1898. 20.0-efficiency Si N/M-Strus based solar cells with excellent broadband spectral response 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY a The superiority of optical antireflection for the Si N/M-Strus based solar cell comparing with the traditional one. b and c The J0 mapping of the Si N/M-Strus based n-emitter and the traditional pyramid-textured solar cell. d Comparison of the long- wavelength IRR e With respect to the injection level at different annealing temperature for symmetrical stack SiO2/SiNx passivated wafers. f The FTIR spectra of the 725 oC annealing sample comparing with that of the as-deposition sample. 2. Large-area c-Si N/M-Strus based PERC ---- Optical and electrical performance 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY The broadband spectral response of the 20.0- efficient Si N/M-Strus based solar cell. a The IQE and reflectance of the Si N/M-Strus based solar cell, comparing with those of the traditional one. b The EQE of the Si N/M- Strus based solar cell, comparing with those of the traditional one. c The I-V curve of the highest 20.0-efficient Si N/M-Strus based solar cell confirmed by the TV Rheinland Co., Ltd. d Photograph of the Si N/M- Strus based solar cell. 2. Large-area c-Si N/M-Strus based PERC---- Device performance Now 21.6 Advanced Functional Materials, Vol. 26, 1892-1898, 2016 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC ----Motivation Lithography MACE inverted-pyramids Traditional upright-pyramids 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC Device structures Process flow 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC ----Morphology SEM images of structures for each step. aPorous Si by the mixed solutions AgNO3/HF/H2O2 MACE. bModified nano holes in the HF/HNO3 solutions. cFormed nano-inverted- pyramids textures by NaOH etching. dPECVD-SiO2/SiNx capping on nano-inverted-pyramids. 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC ----Optical Reflectance of structures for each step comparing with traditional pyramids 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC ----Simulation SunSolve Cell reflectance and absorption superiority of nano-inverted-pyramids comparing with traditional pyramids by SunSolve simulation Module reflectance and absorption superiority of nano-inverted-pyramids comparing with traditional pyramids by SunSolve simulation Solar Cells Modules 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 3. Large-area c-Si nano-inverted-pyramids based PERC Simulated output performance nano-inverted-pyramids solar cell and modulde comparing with those of traditional pyramids. Higher 0.24 Higher 0.27 Higher 0.18 Solar cell Eff 22.09, Module 60 cells power 310.5 W Positive results 23.09, Module 60 cells power 320.0 W 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY 1 ● Preparing Si N/M-Strus by MACE ● Designing and fabricating the c-Si N/M-Strus based PERC with the standard solar wafer size of 156 156 mm2 by employing the simultaneous stack layers SiNx/SiO2 passivation for the front and rear surface ● Achieving the highest conversion efficiency of 20.0 as well as the Voc of 0.653 V and Isc of 9.484 A. 2 ● Preparing nano-inverted-pyramids by combining MACE technique with acid etching and alkali etching ● Investigating the optical superiorities of nano-inverted-pyramids comparing with traditional upright pyramids ● Designing the nano-inverted-pyramids PERC solar cell ● Simulation results by SunSolve Voc669.2 mV, Jsc41.02 mA/cm2, FF0.8028, Eff22.09, Standard Module 60 cells power can be up to 320.0 W 3 ● Optimizing well-organized, uniform and suitable-size nano-inverted-pyramids morphology ● Employing good passivation like ALD-Al2O3 ALD-TiO2. and the doped oxide film ● To achieve over 23.0-efficiency solar cell by using simple, low-cost and compatible processes. 4. Summary 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY Acknowledgements 理 学 院 SCIENCE SCHOOL,HUAIHAI INSTITUE OF TECHNOLOGY HHIT Huaihai Institute of Technology Thank you for your attention