11-High-efficiency silicon inverted-pyramids...silicon PERC solar cells-高琨

High-efficiency silicon inverted-pyramids PERC solar cell with large area Kun Gao 1 高锟,Zengguang Huang 1 黄增光，Wenzhong Shen 2 （沈文忠） 1 School of science, JiangSu Ocean University 江苏海洋大学 2 Shanghai Jiao Tong University（上海交通大学） 11/22/2019 Outline 1.Background 2.Design of Device Structures 3.Optical performance of Si IPs-Strus based PERC 4.Electrical performance of Si IPs-Strus based PERC 5.Performance of Si IPs-Strus based PERC 6.Conclusion 1.Background Traditional upright pyramids MACE inverted pyramids 1 Silicon inverted-pyramids microstructures superiorities More opportunities for three and more bounces; 2 Metal-assisted Chemical Etching for photovoltaics simple, low-cost, large-size, compatible with current production line, recyclable. 2.Design of Si IPs-Strus PERC Process flow Device structure 3.Optical performance （a） （b） （c） （d） （e） （f） （g h a b c d e 4.Electrical performance a τeff with respect to the injection level Δ n at different annealing temperature for symmetrical stack Al2O3/SiNx passivated wafers. The dashed line denotes 1 sun injection level b The FTIR spectra of the sample. c Normalized fitting C-V curves from Au/SiNxAl2O3/Si structure. d EL and PL images. Sample N f cm -2 N it cm -2 /eV As-deposited -4.3null10 11 3.89null10 12 300℃ annealing -2.26null10 12 8.59null10 11 300℃ annealing and light soaked -2.87null10 12 8.68null10 11 800℃ annealing -1.04null10 12 4.32null10 11 800℃ annealing and light soaked -1.65null10 12 4.65null10 11 a b c Table 1. Fixed charge density and Interfacial state density d EL PL 5.Performance of Si IPs-Strus based PERC The broadband spectral response of the efficient Si IPs-Strus based PERC a The IQE and reflectance of the Si IPs-Strus based PERC. b The I-V and P-V curve of the Si IPs-Strus based PERC. c The I-V and P-V curve of the champion device. d Photograph of the IPs-Strus based PERC. b c Group V oc /mV I sc /A R s /Ω cm 2 FF/ E FF / 1 677 9.63 0.002429 80.30 21.41 Best 676 9.62 0.002497 80.15 21.32 Average 2 676 9.60 0.002521 80.14 21.29 Best 674 9.57 0.002499 80.01 21.13 Average 3 679 9.51 0.002576 80.26 21.23 Best 676 9.49 0.002603 79.94 20.99 Average Table 2. Device performance of IPs-Strus based PERC a d Front surface Rear surface 1● Preparing Si IPs-Strus by combining MACE technique with acid etching and alkali etching. ● Investigating the optical and electrical performance of Si IPs-Strus based PERC. ● Designing and fabricating the c-Si IPs-Strus based PERC with the standard solar wafer size of 156null156mm 2 by employing the simultaneous stack layers SiNx/SiO 2 passivation for the front and Al 2 O 3 /SiNx for the rear surface. ● Achieving the highest conversion efficiency of 21.41 as well as the Vo c of 0.677 V and Isc of 9.63 A. 2●Optimizing well-organized, uniform and suitable-size inverted-pyramids morphology. ● Employing good passivation like ALD-Al 2 O 3、 ALD-TiO 2 and the doped oxide film. ●To achieve over 23.0-efficiency solar cell by using simple, low-cost and compatible processes. 6.Conclusion Acknowledgements Thank you for your Attention